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MRF8S21200HR6

MRF8S21200HR6 NXP USA Inc.

MRF8S21200H.pdf
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230
Current - Test: 1.4 A
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230
Technology: LDMOS
Gain: 18.1dB
Power - Output: 48W
Configuration: Dual
Frequency: 2.14GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230
Packaging: Tape & Reel (TR)
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Технічний опис MRF8S21200HR6 NXP USA Inc.

Description: RF MOSFET LDMOS 28V NI1230, Current - Test: 1.4 A, Voltage - Test: 28 V, Voltage - Rated: 65 V, Part Status: Obsolete, Supplier Device Package: NI-1230, Technology: LDMOS, Gain: 18.1dB, Power - Output: 48W, Configuration: Dual, Frequency: 2.14GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230, Packaging: Tape & Reel (TR).