Продукція > NXP USA INC. > MRFE6VP8600HSR6
MRFE6VP8600HSR6

MRFE6VP8600HSR6 NXP USA Inc.


Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Technology: LDMOS
Gain: 19.3dB
Power - Output: 125W
Configuration: Dual
Frequency: 860MHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S
Packaging: Tape & Reel (TR)
Current - Test: 1.4 A
Voltage - Test: 50 V
Voltage - Rated: 130 V
Supplier Device Package: NI-1230S
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Технічний опис MRFE6VP8600HSR6 NXP USA Inc.

Description: RF MOSFET LDMOS 50V NI1230, Technology: LDMOS, Gain: 19.3dB, Power - Output: 125W, Configuration: Dual, Frequency: 860MHz, Mounting Type: Chassis Mount, Package / Case: NI-1230S, Packaging: Tape & Reel (TR), Current - Test: 1.4 A, Voltage - Test: 50 V, Voltage - Rated: 130 V, Supplier Device Package: NI-1230S.