Продукція > NXP USA INC. > MRFX1K80NR5578

MRFX1K80NR5578 NXP USA Inc.

MRFX1K80N.pdf
Виробник: NXP USA Inc.
Description: RF POWER FIELD-EFFECT TRANSISTOR
Current - Test: 100 mA
Voltage - Test: 65 V
Voltage - Rated: 179 V
Part Status: Active
Supplier Device Package: OM-1230-4L2L
Technology: LDMOS
Gain: 24.4dB
Power - Output: 1800W
Configuration: Dual
Frequency: 1.8MHz ~ 400MHz
Mounting Type: Chassis Mount
Current Rating (Amps): 100mA
Package / Case: OM-1230-4L2L
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис MRFX1K80NR5578 NXP USA Inc.

Description: RF POWER FIELD-EFFECT TRANSISTOR, Current - Test: 100 mA, Voltage - Test: 65 V, Voltage - Rated: 179 V, Part Status: Active, Supplier Device Package: OM-1230-4L2L, Technology: LDMOS, Gain: 24.4dB, Power - Output: 1800W, Configuration: Dual, Frequency: 1.8MHz ~ 400MHz, Mounting Type: Chassis Mount, Current Rating (Amps): 100mA, Package / Case: OM-1230-4L2L, Packaging: Bulk.