MSC010SDA070S Microchip Technology
Виробник: Microchip TechnologyDescription: DIODE SIL CARBIDE 700V 10A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: D3Pak
Voltage - DC Reverse (Vr) (Max): 700 V
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Технічний опис MSC010SDA070S Microchip Technology
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; D3PAK,TO268; SiC; SMD; 700V; 10A; tube, Type of diode: Schottky rectifying, Case: D3PAK; TO268, Technology: SiC, Mounting: SMD, Max. off-state voltage: 700V, Load current: 10A, Semiconductor structure: single diode, Max. forward voltage: 1.8V, Leakage current: 0.2mA, Max. forward impulse current: 58A, Kind of package: tube, Power dissipation: 36W.
Інші пропозиції MSC010SDA070S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MSC010SDA070S | Виробник : Microchip Technology |
SiC Schottky Diodes SIC SBD 700 V 10 A TO-268 |
товару немає в наявності |
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| MSC010SDA070S | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D3PAK,TO268; SiC; SMD; 700V; 10A; tube Type of diode: Schottky rectifying Case: D3PAK; TO268 Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Leakage current: 0.2mA Max. forward impulse current: 58A Kind of package: tube Power dissipation: 36W |
товару немає в наявності |