MSC016SMC120B4N MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 94A; Idm: 450A; 524W; SMC
Power dissipation: 524W
Mounting: THT
Kind of package: tube
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Family: SMC
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 19mΩ
Drain current: 94A
Pulsed drain current: 450A
Drain-source voltage: 700V
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 94A; Idm: 450A; 524W; SMC
Power dissipation: 524W
Mounting: THT
Kind of package: tube
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Family: SMC
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 19mΩ
Drain current: 94A
Pulsed drain current: 450A
Drain-source voltage: 700V
Kind of channel: enhancement
Technology: SiC
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Технічний опис MSC016SMC120B4N MICROCHIP TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 94A; Idm: 450A; 524W; SMC, Power dissipation: 524W, Mounting: THT, Kind of package: tube, Case: TO247-4, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Family: SMC, Polarisation: unipolar, Gate charge: 215nC, On-state resistance: 19mΩ, Drain current: 94A, Pulsed drain current: 450A, Drain-source voltage: 700V, Kind of channel: enhancement, Technology: SiC.