Технічний опис MSC025SMA330B4 Microchip Technology
Description: MOSFET SIC 3300 V 25 MOHM TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 2.7V @ 7mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 8720 pF @ 2640 V.
Інші пропозиції MSC025SMA330B4
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MSC025SMA330B4 | Виробник : Microchip Technology |
Description: MOSFET SIC 3300 V 25 MOHM TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 7mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 8720 pF @ 2640 V |
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