MSC031SMC120B4N MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 161A; 362W
Power dissipation: 362W
Mounting: THT
Kind of package: tube
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Family: SMC
Polarisation: unipolar
Gate charge: 70nC
On-state resistance: 42mΩ
Drain current: 51A
Pulsed drain current: 161A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 161A; 362W
Power dissipation: 362W
Mounting: THT
Kind of package: tube
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Family: SMC
Polarisation: unipolar
Gate charge: 70nC
On-state resistance: 42mΩ
Drain current: 51A
Pulsed drain current: 161A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
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Технічний опис MSC031SMC120B4N MICROCHIP TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 161A; 362W, Power dissipation: 362W, Mounting: THT, Kind of package: tube, Case: TO247-4, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Family: SMC, Polarisation: unipolar, Gate charge: 70nC, On-state resistance: 42mΩ, Drain current: 51A, Pulsed drain current: 161A, Drain-source voltage: 1.2kV, Kind of channel: enhancement, Technology: SiC.