Технічний опис MSC360SMA120SA Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-26, Packaging: Tube, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.14V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V.
Інші пропозиції MSC360SMA120SA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MSC360SMA120SA | Виробник : Microchip Technology |
 MOSFET SIC 1200 V 360 mOhm TO-263-7 |
товару немає в наявності |
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MSC360SMA120SA | Виробник : Microchip Technology |
Description: MOSFET SIC 1200 V 360 MOHM TO-26 Packaging: Tube Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.14V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V |
товару немає в наявності |