MSCSM120AM042D3AG Microchip Technology

Description: MOSFET 2N-CH 1200V 495A, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.031kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 18mA, Part Status: Active.