Технічний опис MSCSM120DUM042AG Microchip Technology
Description: SIC 2N-CH 1200V 495A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2031W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA, Part Status: Active.
Інші пропозиції MSCSM120DUM042AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MSCSM120DUM042AG | Виробник : Microchip Technology |
Description: SIC 2N-CH 1200V 495A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2031W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Part Status: Active |
товар відсутній |