MSCSM170HRM233AG Microchip Technology

Description: SIC 4N-CH 1700V/1200V 124A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 602W (Tc), 395W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA.