MSCSM170HRM451AG Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET 4N-CH 1700V/1200V 64A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc), 395W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 9682.02 грн |
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Технічний опис MSCSM170HRM451AG Microchip Technology
Description: MOSFET 4N-CH 1700V/1200V 64A, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 319W (Tc), 395W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA, Part Status: Active.
Інші пропозиції MSCSM170HRM451AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MSCSM170HRM451AG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-SIC-SP1F |
товару немає в наявності |