MSCSM70VR1M03CT6AG Microchip Technology
Виробник: Microchip TechnologyDescription: PM-MOSFET-SIC-SBD-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.625kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 585A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 700V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1075nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 20mA
Part Status: Active
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Технічний опис MSCSM70VR1M03CT6AG Microchip Technology
Description: PM-MOSFET-SIC-SBD-SP6C, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.625kW (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 585A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 700V, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 200A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1075nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 20mA, Part Status: Active.