Продукція > ROHM SEMICONDUCTOR > MSM5117400F-60T3-K-7
MSM5117400F-60T3-K-7

MSM5117400F-60T3-K-7 Rohm Semiconductor

MSM5117400F.pdf
Виробник: Rohm Semiconductor
Description: IC DRAM 16MBIT PARALLEL KBU
Memory Organization: 4M x 4
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 110ns
Part Status: Obsolete
Supplier Device Package: KBU
Memory Format: DRAM
Technology: DRAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 26-SMD
Packaging: Tray
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 800 шт
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Технічний опис MSM5117400F-60T3-K-7 Rohm Semiconductor

Description: IC DRAM 16MBIT PARALLEL KBU, Memory Organization: 4M x 4, Access Time: 30 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 110ns, Part Status: Obsolete, Supplier Device Package: KBU, Memory Format: DRAM, Technology: DRAM, Voltage - Supply: 4.5V ~ 5.5V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 16Mbit, Mounting Type: Surface Mount, Package / Case: 26-SMD, Packaging: Tray, DigiKey Programmable: Not Verified.