MSMCJ45CA MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
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Технічний опис MSMCJ45CA MICROCHIP (MICROSEMI)
Description: TVS DIODE 45VWM 72.7VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 20.6A, Voltage - Reverse Standoff (Typ): 45V, Supplier Device Package: DO-214AB (SMCJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 50V, Voltage - Clamping (Max) @ Ipp: 72.7V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Part Status: Active, Grade: Military, Qualification: MIL-PRF-19500.
Інші пропозиції MSMCJ45CA
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MSMCJ45CA | Виробник : Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20.6A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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MSMCJ45CA | Виробник : Microchip Technology |
ESD Suppressors / TVS Diodes TVS 45V 5% 1500W bi |
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MSMCJ45CA | Виробник : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
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