Технічний опис MSRT20060(A) GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: Three Tower, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції MSRT20060(A)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MSRT20060A | Виробник : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 600V 200A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Three Tower Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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