MSS1P5HM3/89A Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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Технічний опис MSS1P5HM3/89A Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP, Package / Case: MicroSMP, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 150 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: MicroSMP (DO-219AD), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount.