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Технічний опис MT28EW01GABA1HJS-0AAT Micron
Description: IC FLASH 1GBIT PARALLEL 56TSOP, Supplier Device Package: 56-TSOP, Memory Format: FLASH, Technology: FLASH - NOR, Voltage - Supply: 2.7V ~ 3.6V, Write Cycle Time - Word, Page: 60ns, Grade: Automotive, Operating Temperature: -40°C ~ 105°C (TA), Memory Type: Non-Volatile, Memory Size: 1Gbit, Mounting Type: Surface Mount, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Packaging: Bulk, Qualification: AEC-Q100, DigiKey Programmable: Not Verified, Memory Organization: 128M x 8, 64M x 16, Access Time: 105 ns, Memory Interface: Parallel.
Інші пропозиції MT28EW01GABA1HJS-0AAT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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MT28EW01GABA1HJS-0AAT | Micron Technology Inc. |
 Description: IC FLASH 1GBIT PARALLEL 56TSOPSupplier Device Package: 56-TSOP Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Write Cycle Time - Word, Page: 60ns Grade: Automotive Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Packaging: Bulk Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 128M x 8, 64M x 16 Access Time: 105 ns Memory Interface: Parallel |
товару немає в наявності |
В кошику од. на суму грн. |
| MT28EW01GABA1HJS-0AAT |
|
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Bulk
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8, 64M x 16
Access Time: 105 ns
Memory Interface: Parallel
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Bulk
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8, 64M x 16
Access Time: 105 ns
Memory Interface: Parallel
товару немає в наявності
В кошику
од. на суму грн.