Технічний опис MT28EW512ABA1HJS-0AAT Micron
Description: IC FLASH 512MBIT PARALLEL 56TSOP, Packaging: Tube, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Memory Format: FLASH, Supplier Device Package: 56-TSOP, Grade: Automotive, Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 105 ns, Memory Organization: 64M x 8, 32M x 16, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції MT28EW512ABA1HJS-0AAT
| Фото | Назва | Виробник | Інформація |
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MT28EW512ABA1HJS-0AAT | Виробник : Micron Technology Inc. |
 Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tube Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 105 ns Memory Organization: 64M x 8, 32M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |