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Технічний опис MT28EW512ABA1HJS-0AAT Micron
Description: IC FLASH 512MBIT PARALLEL 56TSOP, Qualification: AEC-Q100, DigiKey Programmable: Not Verified, Memory Organization: 64M x 8, 32M x 16, Access Time: 105 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 60ns, Grade: Automotive, Supplier Device Package: 56-TSOP, Memory Format: FLASH, Technology: FLASH - NOR, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 105°C (TA), Memory Type: Non-Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Packaging: Tube.
Інші пропозиції MT28EW512ABA1HJS-0AAT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MT28EW512ABA1HJS-0AAT | Виробник : Micron Technology Inc. |
 Description: IC FLASH 512MBIT PARALLEL 56TSOPQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 64M x 8, 32M x 16 Access Time: 105 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Grade: Automotive Supplier Device Package: 56-TSOP Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Packaging: Tube |
товару немає в наявності |