Продукція > MICRON TECHNOLOGY INC. > MT40A1G8WE-083E:B TR
MT40A1G8WE-083E:B TR

MT40A1G8WE-083E:B TR Micron Technology Inc.

8gb_ddr4_sdram.pdf?rev=74679247a1e24e57b6726071152f1384
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 1.2GHZ 78FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1G x 8
Memory Interface: Parallel
Supplier Device Package: 78-FBGA (8x12)
Memory Format: DRAM
Clock Frequency: 1.2 GHz
Technology: SDRAM - DDR4
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tape & Reel (TR)
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Технічний опис MT40A1G8WE-083E:B TR Micron Technology Inc.

Description: IC DRAM 8GBIT PAR 1.2GHZ 78FBGA, DigiKey Programmable: Not Verified, Memory Organization: 1G x 8, Memory Interface: Parallel, Supplier Device Package: 78-FBGA (8x12), Memory Format: DRAM, Clock Frequency: 1.2 GHz, Technology: SDRAM - DDR4, Voltage - Supply: 1.14V ~ 1.26V, Operating Temperature: 0°C ~ 95°C (TC), Memory Type: Volatile, Memory Size: 8Gbit, Mounting Type: Surface Mount, Package / Case: 78-TFBGA, Packaging: Tape & Reel (TR).