Технічний опис MT41K512M8V80AWC1 Micron Technology
Description: IC DRAM 4GBIT PARALLEL DIE, Packaging: Bulk, Package / Case: Die, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C (TC), Voltage - Supply: 1.283V ~ 1.45V, Technology: SDRAM - DDR3L, Memory Format: DRAM, Supplier Device Package: Die, Memory Interface: Parallel, Memory Organization: 512M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції MT41K512M8V80AWC1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MT41K512M8V80AWC1 | Виробник : Micron Technology Inc. |
Description: IC DRAM 4GBIT PARALLEL DIE Packaging: Bulk Package / Case: Die Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Memory Format: DRAM Supplier Device Package: Die Memory Interface: Parallel Memory Organization: 512M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |