Продукція > MICRON TECHNOLOGY INC. > MT47H32M16BN-37E:D TR
MT47H32M16BN-37E:D TR

MT47H32M16BN-37E:D TR Micron Technology Inc.

MT47H128M4_32M16_64M8_Rev_C.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 84FBGA
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 84-FBGA (10x12.5)
Memory Format: DRAM
Clock Frequency: 267 MHz
Technology: SDRAM - DDR2
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32M x 16
Access Time: 500 ps
Memory Interface: Parallel
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Технічний опис MT47H32M16BN-37E:D TR Micron Technology Inc.

Description: IC DRAM 512MBIT PAR 84FBGA, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 84-FBGA (10x12.5), Memory Format: DRAM, Clock Frequency: 267 MHz, Technology: SDRAM - DDR2, Voltage - Supply: 1.7V ~ 1.9V, Operating Temperature: 0°C ~ 85°C (TC), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 84-TFBGA, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Memory Organization: 32M x 16, Access Time: 500 ps, Memory Interface: Parallel.