MT53E128M32D2FW-046 AUT:A TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
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Технічний опис MT53E128M32D2FW-046 AUT:A TR Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA, Qualification: AEC-Q100, Access Time: 3.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 18ns, Grade: Automotive, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 2.133 GHz, Technology: SDRAM - Mobile LPDDR4X, Voltage - Supply: 1.06V ~ 1.17V, Operating Temperature: -40°C ~ 125°C (TC), Memory Type: Volatile, Memory Size: 4Gbit, Mounting Type: Surface Mount, Package / Case: 200-TFBGA, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Memory Organization: 128M x 32.
Інші пропозиції MT53E128M32D2FW-046 AUT:A TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MT53E128M32D2FW-046 AUT:A TR | Виробник : Micron |
DRAM LPDDR4 4G 128MX32 FBGA DDP |
товару немає в наявності |