Технічний опис MT53E1G16D1FW-046 AIT:A Micron Technology
Description: IC DRAM 16GBIT PAR 200TFBGA, Packaging: Box, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Grade: Automotive, Part Status: Active, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 1G x 16, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції MT53E1G16D1FW-046 AIT:A
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MT53E1G16D1FW-046 AIT:A | Виробник : Micron Technology Inc. |
 Description: IC DRAM 16GBIT PAR 200TFBGAPackaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
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MT53E1G16D1FW-046 AIT:A | Виробник : Micron |
DRAM LPDDR4 16G 1GX16 FBGA |
товару немає в наявності |