MT53E1G16D1FW-046 WT:A TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Memory Organization: 1G x 16
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Part Status: Active
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -30°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 16Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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Технічний опис MT53E1G16D1FW-046 WT:A TR Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA, Memory Organization: 1G x 16, Access Time: 3.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 18ns, Part Status: Active, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 2.133 GHz, Technology: SDRAM - Mobile LPDDR4X, Voltage - Supply: 1.06V ~ 1.17V, Operating Temperature: -30°C ~ 85°C (TC), Memory Type: Volatile, Memory Size: 16Gbit, Mounting Type: Surface Mount, Package / Case: 200-TFBGA, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified.
Інші пропозиції MT53E1G16D1FW-046 WT:A TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MT53E1G16D1FW-046 WT:A TR | Виробник : Micron |
 DRAM LPDDR4 16G 1GX16 FBGA |
товару немає в наявності |