Продукція > MICRON TECHNOLOGY INC. > MT53E256M32D2FW-046 AUT:B TR
MT53E256M32D2FW-046 AUT:B TR

MT53E256M32D2FW-046 AUT:B TR Micron Technology Inc.

200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
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Технічний опис MT53E256M32D2FW-046 AUT:B TR Micron Technology Inc.

Description: LPDDR4 8G 256MX32 FBGA DDP, Operating Temperature: -40°C ~ 125°C (TC), Memory Type: Volatile, Memory Size: 8Gbit, Mounting Type: Surface Mount, Package / Case: 200-TFBGA, Packaging: Tape & Reel (TR), Qualification: AEC-Q100, DigiKey Programmable: Not Verified, Memory Organization: 256M x 32, Access Time: 3.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 18ns, Grade: Automotive, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 2.133 GHz, Technology: SDRAM - Mobile LPDDR4X, Voltage - Supply: 1.06V ~ 1.17V.