MT53E512M16D1FW-046 AIT:D TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Memory Organization: 512M x 16
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Part Status: Active
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
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Технічний опис MT53E512M16D1FW-046 AIT:D TR Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA, Memory Organization: 512M x 16, Access Time: 3.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 18ns, Part Status: Active, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 2.133 GHz, Technology: SDRAM - Mobile LPDDR4X, Voltage - Supply: 1.06V ~ 1.17V, Operating Temperature: -40°C ~ 95°C (TC), Memory Type: Volatile, Memory Size: 8Gbit, Mounting Type: Surface Mount, Package / Case: 200-TFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції MT53E512M16D1FW-046 AIT:D TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MT53E512M16D1FW-046 AIT:D TR | Виробник : Micron | DRAM LPDDR4 8G 512MX16 FBGA |
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