MUR440HA0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
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Технічний опис MUR440HA0G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 400 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 65pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns.