MURS320T3H onsemi
Виробник: onsemi
Description: DIODE GEN PURP 200V 4A SMC
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
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Технічний опис MURS320T3H onsemi
Description: DIODE GEN PURP 200V 4A SMC, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tray, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: SMC, Current - Average Rectified (Io): 4A.