MWS5101EL2X

MWS5101EL2X Harris Corporation


HRISD004-6-49.pdf?t.download=true&u=5oefqw
Виробник: Harris Corporation
Description: IC SRAM 1KBIT PARALLEL 22DIP
Memory Organization: 256 x 4
Access Time: 250 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 300ns
Part Status: Active
Supplier Device Package: 22-PDIP
Memory Format: SRAM
Technology: SRAM - Synchronous
Voltage - Supply: 4V ~ 6.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 1Kbit
Mounting Type: Through Hole
Package / Case: 22-DIP (0.400", 10.16mm)
Packaging: Bulk
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Технічний опис MWS5101EL2X Harris Corporation

Description: IC SRAM 1KBIT PARALLEL 22DIP, Memory Organization: 256 x 4, Access Time: 250 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 300ns, Part Status: Active, Supplier Device Package: 22-PDIP, Memory Format: SRAM, Technology: SRAM - Synchronous, Voltage - Supply: 4V ~ 6.5V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 1Kbit, Mounting Type: Through Hole, Package / Case: 22-DIP (0.400", 10.16mm), Packaging: Bulk.