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N3T080MP330K

N3T080MP330K NoMIS Power

3M-VHB-Adhesive-Transfer-Tape-F9469PC.pdf
Виробник: NoMIS Power
Description: 3300 V 80 mOhm SiC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 20V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -5V
Drain to Source Voltage (Vdss): 3300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4049.80 грн
10+3802.07 грн
25+3704.60 грн
В кошику  од. на суму  грн.
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Технічний опис N3T080MP330K NoMIS Power

Description: 3300 V 80 mOhm SiC MOSFET TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A, Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 20V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 3V @ 10mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -5V, Drain to Source Voltage (Vdss): 3300 V.