NAND16GW3B6DPA6F TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC FLSH 16GBIT PARALLEL 114LFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2G x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 114-LFBGA (12x16)
Memory Format: FLASH
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Gbit
Mounting Type: Surface Mount
Package / Case: 114-LFBGA
Packaging: Tape & Reel (TR)
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Технічний опис NAND16GW3B6DPA6F TR Micron Technology Inc.
Description: IC FLSH 16GBIT PARALLEL 114LFBGA, DigiKey Programmable: Not Verified, Memory Organization: 2G x 8, Access Time: 25 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 25ns, Supplier Device Package: 114-LFBGA (12x16), Memory Format: FLASH, Technology: FLASH - NAND, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 16Gbit, Mounting Type: Surface Mount, Package / Case: 114-LFBGA, Packaging: Tape & Reel (TR).