NC1D120C30KTNG NovuSem
Виробник: NovuSemDescription: DIODE SIL CARB 1200V 30A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2125pF @ 0.1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 85 µA @ 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 637.01 грн |
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Технічний опис NC1D120C30KTNG NovuSem
Description: DIODE SIL CARB 1200V 30A TO2472L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2125pF @ 0.1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Current - Reverse Leakage @ Vr: 85 µA @ 1200 V.