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NC1M120C35HTNG

NC1M120C35HTNG NextGen Components

NC1M120C35HTNG.pdf Виробник: NextGen Components
Description: SIC MOSFET 1200V 35M 75A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 33.3A, 18V
Power Dissipation (Max): 386W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 15mA
Supplier Device Package: TO-247-4L
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2834 pF @ 1 kV
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+1664.60 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
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Технічний опис NC1M120C35HTNG NextGen Components

Description: SIC MOSFET 1200V 35M 75A TO247-, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 33.3A, 18V, Power Dissipation (Max): 386W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 15mA, Supplier Device Package: TO-247-4L, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1.2 kV, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2834 pF @ 1 kV.