NC1M120C75RRNG NovuSem
Виробник: NovuSemDescription: SiC MOSFET N 1200V 75mohm 46A 7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, DPak (7 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 240W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 1000 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 1215.07 грн |
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Технічний опис NC1M120C75RRNG NovuSem
Description: SiC MOSFET N 1200V 75mohm 46A 7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, DPak (7 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V, Power Dissipation (Max): 240W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 5mA, Supplier Device Package: TO-263-7L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 1000 V.