Технічний опис ND260N12KHPSA1 Infineon Technologies
Description: DIODE GP 1.2KV 104A PB50ND-1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 104A, Supplier Device Package: BG-PB50ND-1, Operating Temperature - Junction: -40°C ~ 135°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Reverse Leakage @ Vr: 20 mA @ 1200 V.
Інші пропозиції ND260N12KHPSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| ND260N12KHPSA1 | Виробник : Infineon Technologies |
 Description: DIODE GP 1.2KV 104A PB50ND-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 104A Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40°C ~ 135°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 20 mA @ 1200 V |
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