Технічний опис ND261N26KHPSA1 Infineon Technologies
Description: DIODE GP 2.6KV 260A PB50ND-1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 260A, Supplier Device Package: BG-PB50ND-1, Operating Temperature - Junction: -40°C ~ 135°C, Voltage - DC Reverse (Vr) (Max): 2600 V, Current - Reverse Leakage @ Vr: 40 mA @ 2600 V.
Інші пропозиції ND261N26KHPSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| ND261N26KHPSA1 | Виробник : Infineon Technologies |
Description: DIODE GP 2.6KV 260A PB50ND-1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 260A Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40°C ~ 135°C Voltage - DC Reverse (Vr) (Max): 2600 V Current - Reverse Leakage @ Vr: 40 mA @ 2600 V |
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