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NE350184C CEL

Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V 84C
Noise Figure: 0.7dB
Technology: GaAs HJ-FET
Gain: 13.5dB
Frequency: 20GHz
Current Rating (Amps): 70mA
Package / Case: Micro-X ceramic (84C)
Packaging: Bulk
Voltage - Rated: 4 V
Supplier Device Package: 84C
Current - Test: 10 mA
Voltage - Test: 2 V

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Технічний опис NE350184C CEL

Description: RF MOSFET GAAS HJ-FET 2V 84C, Noise Figure: 0.7dB, Technology: GaAs HJ-FET, Gain: 13.5dB, Frequency: 20GHz, Current Rating (Amps): 70mA, Package / Case: Micro-X ceramic (84C), Packaging: Bulk, Voltage - Rated: 4 V, Supplier Device Package: 84C, Current - Test: 10 mA, Voltage - Test: 2 V.