NE3513M04-A CEL

Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Current - Test: 10 mA
Voltage - Test: 2 V
Voltage - Rated: 4 V
Supplier Device Package: M04
Noise Figure: 0.65dB
Technology: GaAs HJ-FET
Gain: 13dB
Power - Output: 125mW
Configuration: N-Channel
Frequency: 12GHz
Current Rating (Amps): 60mA
Package / Case: SOT-343F
Packaging: Bulk

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Технічний опис NE3513M04-A CEL

Description: RF MOSFET GAAS HJ-FET 2V M04, Current - Test: 10 mA, Voltage - Test: 2 V, Voltage - Rated: 4 V, Supplier Device Package: M04, Noise Figure: 0.65dB, Technology: GaAs HJ-FET, Gain: 13dB, Power - Output: 125mW, Configuration: N-Channel, Frequency: 12GHz, Current Rating (Amps): 60mA, Package / Case: SOT-343F, Packaging: Bulk.