NE3521M04-A CEL

Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V
Current - Test: 6 mA
Voltage - Test: 2 V
Voltage - Rated: 3 V
Noise Figure: 0.85dB
Technology: GaAs HJ-FET
Gain: 10.5dB
Configuration: N-Channel
Frequency: 20GHz
Current Rating (Amps): 15mA
Package / Case: 4-SMD, Flat Leads
Packaging: Strip

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Технічний опис NE3521M04-A CEL

Description: RF MOSFET GAAS HJ-FET 2V, Current - Test: 6 mA, Voltage - Test: 2 V, Voltage - Rated: 3 V, Noise Figure: 0.85dB, Technology: GaAs HJ-FET, Gain: 10.5dB, Configuration: N-Channel, Frequency: 20GHz, Current Rating (Amps): 15mA, Package / Case: 4-SMD, Flat Leads, Packaging: Strip.