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NE6510179A-T1-A

NE6510179A-T1-A CEL

NE6510179A.pdf
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 3.5V 79A
Voltage - Test: 3.5 V
Voltage - Rated: 8 V
Supplier Device Package: 79A
Technology: GaAs HJ-FET
Gain: 10dB
Power - Output: 32.5dBm
Frequency: 1.9GHz
Current Rating (Amps): 2.8A
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Test: 200 mA
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Технічний опис NE6510179A-T1-A CEL

Description: RF MOSFET GAAS HJ-FET 3.5V 79A, Voltage - Test: 3.5 V, Voltage - Rated: 8 V, Supplier Device Package: 79A, Technology: GaAs HJ-FET, Gain: 10dB, Power - Output: 32.5dBm, Frequency: 1.9GHz, Current Rating (Amps): 2.8A, Package / Case: 4-SMD, Flat Leads, Packaging: Tape & Reel (TR), Current - Test: 200 mA.