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NE851M13-T3-A

NE851M13-T3-A CEL

NE851M13%2C2SC5801.pdf
Виробник: CEL
Description: RF TRANS NPN 5.5V 4.5GHZ M13
Gain: 4dB ~ 5.5dB @ 2GHZ
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-3
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: M13
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Frequency - Transition: 4.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Voltage - Collector Emitter Breakdown (Max): 5.5V
Current - Collector (Ic) (Max): 100mA
Power - Max: 140mW
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Технічний опис NE851M13-T3-A CEL

Description: RF TRANS NPN 5.5V 4.5GHZ M13, Gain: 4dB ~ 5.5dB @ 2GHZ, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-3, Packaging: Cut Tape (CT), Part Status: Obsolete, Supplier Device Package: M13, Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz, Frequency - Transition: 4.5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V, Voltage - Collector Emitter Breakdown (Max): 5.5V, Current - Collector (Ic) (Max): 100mA, Power - Max: 140mW.