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NESG2030M04-A

NESG2030M04-A CEL

NESG2030M04.pdf
Виробник: CEL
Description: RF TRANS NPN 2.3V 60GHZ M04
Supplier Device Package: M04
Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
Frequency - Transition: 60GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Voltage - Collector Emitter Breakdown (Max): 2.3V
Current - Collector (Ic) (Max): 35mA
Power - Max: 80mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-343F
Packaging: Bulk
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Технічний опис NESG2030M04-A CEL

Description: RF TRANS NPN 2.3V 60GHZ M04, Supplier Device Package: M04, Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz, Frequency - Transition: 60GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V, Voltage - Collector Emitter Breakdown (Max): 2.3V, Current - Collector (Ic) (Max): 35mA, Power - Max: 80mW, Gain: 16dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-343F, Packaging: Bulk.