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NESG2101M05-A

NESG2101M05-A CEL

NESG2101M05.pdf
Виробник: CEL
Description: RF TRANS NPN 5V 17GHZ M05
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-343F
Packaging: Bulk
Supplier Device Package: M05
Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Frequency - Transition: 17GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
Voltage - Collector Emitter Breakdown (Max): 5V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Gain: 11dB ~ 19dB
Operating Temperature: 150°C (TJ)
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Технічний опис NESG2101M05-A CEL

Description: RF TRANS NPN 5V 17GHZ M05, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-343F, Packaging: Bulk, Supplier Device Package: M05, Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz, Frequency - Transition: 17GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V, Voltage - Collector Emitter Breakdown (Max): 5V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Gain: 11dB ~ 19dB, Operating Temperature: 150°C (TJ).