Технічний опис NGTB50N60FL2WG ON Semiconductor
Description: IGBT TRENCH FS 600V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 94 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 100ns/237ns, Switching Energy: 1.5mJ (on), 460µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 220 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 417 W.
Інші пропозиції NGTB50N60FL2WG
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NGTB50N60FL2WG | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 94 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 100ns/237ns Switching Energy: 1.5mJ (on), 460µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 220 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 417 W |
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