NP40N055KLE-E1-AY Renesas Electronics Corporation


RNCCS18638-1.pdf?t.download=true&u=5oefqw
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 40A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Part Status: Obsolete
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
209+97.70 грн
Мінімальне замовлення: 209 шт
В кошику  од. на суму  грн.
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Технічний опис NP40N055KLE-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 55V 40A TO263, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Part Status: Obsolete, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 66W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc).