NP80N04NHE-S18-AY Renesas Electronics Corporation

Description: MOSFET N-CH 40V 80A TO262, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Part Status: Obsolete, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 120W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.