NP82N04NDG-S18-AY NEC Corporation

Description: MOSFET N-CH 40V 82A 3LDPAK, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Part Status: Obsolete, Supplier Device Package: 3-LDPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 143W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.