NP82N10PUF-E1-AY Renesas
Виробник: Renesas
Description: NP82N10PUF-E1-AY - MOS FIELD EFF
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.8V, 10V
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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Технічний опис NP82N10PUF-E1-AY Renesas
Description: NP82N10PUF-E1-AY - MOS FIELD EFF, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5.8V, 10V, Supplier Device Package: TO-263-3, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.