NTD4854N-1G onsemi

Description: MOSFET N-CH 25V 15.7A/128A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.